Diffusion capacitance — is the capacitance due to transport of charge carriers between two terminals of a device, for example, the diffusion of carriers from anode to cathode in forward bias mode of a diode or from emitter to base (forward biased junction in active… … Wikipedia
Diffusion transistor — A diffusion transistor is any transistor formed by diffusing dopants into a semiconductor substrate. Diffusion transistors include some types of both bipolar junction transistors and field effect transistors. The diffusion process was developed… … Wikipedia
Diffusion current — Contents 1 Introduction 1.1 Diffusion current versus drift current 1.2 Carrier Actions of Diffusion Current 2 Derivation of diffusion current … Wikipedia
Diffusion — This article is about the generic concept of the time dependent random process. For other uses, see Diffusion (disambiguation). Diffusion describes the spread of particles through random motion from regions of higher concentration to regions of… … Wikipedia
diffusion potential — Potential arising from different rates of diffusion of ions at the interface of two dissimilar fluids; a junction potential … Dictionary of molecular biology
junction potential — Potential difference at the boundary between dissimilar solutions; arises from differences in diffusion constants between ions … Dictionary of molecular biology
diffused junction — difuzinė sandūra statusas T sritis automatika atitikmenys: angl. diffused junction; diffusion junction vok. diffundierter Übergang, m rus. диффузионный переход, m pranc. jonction de diffusion, f … Automatikos terminų žodynas
jonction de diffusion — difuzinė sandūra statusas T sritis automatika atitikmenys: angl. diffused junction; diffusion junction vok. diffundierter Übergang, m rus. диффузионный переход, m pranc. jonction de diffusion, f … Automatikos terminų žodynas
Bipolar junction transistor — BJT redirects here. For the Japanese language proficiency test, see Business Japanese Proficiency Test. PNP … Wikipedia
p-n junction — A silicon p–n junction with no applied voltage. A p–n junction is formed at the boundary between a P type and N type semiconductor created in a single crystal of semiconductor by doping, for example by ion implantation, diffusion of dopants, or… … Wikipedia